APTGLQ40HR120CT3G APTGLQ40HR120CT3G C rev 0 november, 2012 www.microsemi.com 1-9 all ratings @ t j = 25c unless otherwise specified these devices are se nsitive to electrostatic disc harge. proper handling procedures should be followed. see application note apt0502 on www.microsemi.com all multiple inputs and outputs must be shorted together 10/11 ; 23/24 ; 2/3 ; high speed trench & field stop igbt4 (q1, q2): v ces = 1200v ; i c = 40a @ tc = 80c trench & field stop igbt3 (q3, q4): v ces = 600v ; i c = 50a @ tc = 80c application ? solar converter ? uninterruptible power supplies features ? q1, q2 high speed trench + field stop igbt4 - low voltage drop - low tail current ? q3, q4 trench + field stop igbt3 - low voltage drop - low tail current - switching frequency up to 20 khz ? sic schottky diode (d3, d4) - zero reverse recovery - zero forward recovery - temperature independent switching behavior - positive temperature coefficient on vf ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor for temperature monitoring benefits ? stable temperature behavior ? very rugged ? solderable terminals for easy pcb mounting ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive t c of v cesat ? low profile ? rohs compliant phase leg & dual common emitter power module downloaded from: http:///
APTGLQ40HR120CT3G APTGLQ40HR120CT3G C rev 0 november, 2012 www.microsemi.com 2-9 1. high speed trench & field stop igbt4 phase leg q1&q2 (per igbt) absolute maximum ratings (per igbt) electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 1200v 100 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 40a t j = 25c 1.7 2.05 2.4 v t j = 150c 2.6 v ge ( th ) gate threshold voltage v ge = v ce , i c = 1 ma 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 120 na dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 2300 pf c oes output capacitance 150 c res reverse transfer capacitance 135 q g gate charge v ge = 15v, i c = 40a v ce = 960v 185 nc t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 600v i c = 40a r g = 12 30 ns t r rise time 57 t d(off) turn-off delay time 290 t f fall time 16 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 600v i c = 40a r g = 12 30 ns t r rise time 49 t d(off) turn-off delay time 366 t f fall time 48 e on turn on energy v ge = 15v v bus = 600v i c = 40a r g = 12 t j = 25c 3.2 mj t j = 150c 3.75 e off turn off energy t j = 25c 1.2 t j = 150c 2.25 i sc short circuit data v ge 15v ; v bus = 600v t p 10s ; t j = 150c 150 a r thjc junction to case thermal resistance 0.6 c/w symbol parameter max ratings unit v ces collector - emitter breakdown voltage 1200 v i c continuous collector current t c = 25c 75 a t c = 80c 40 i cm pulsed collector current t c = 25c 160 v ge gate C emitter voltage 20 v p d maximum power dissipation 250 w rbsoa reverse bias safe operating area t j = 150c 80a @ 1100v downloaded from: http:///
APTGLQ40HR120CT3G APTGLQ40HR120CT3G C rev 0 november, 2012 www.microsemi.com 3-9 diode ratings and characteristics (d1 & d2) (per diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 1200 v i rm maximum reverse leakage current v r =1200v 100 a i f dc forward current tc = 80c 25 a v f diode forward voltage i f = 25a 2.6 3.1 v i f = 50a 3.2 i f = 25a t j = 125c 1.8 t rr reverse recovery time i f = 25a v r = 667v di/dt =200a/s t j = 25c 320 ns t j = 125c 360 q rr reverse recovery charge t j = 25c 480 nc t j = 125c 1800 r thjc junction to case thermal resistance 1.4 c/w 2. trench & field stop igbt3 dual common emitter q3&q4 (per igbt) absolute maximum ratings (per igbt) symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v i c continuous collector current t c = 25c 80 a t c = 80c 50 i cm pulsed collector current t c = 25c 100 v ge gate C emitter voltage 20 v p d maximum power dissipation t c = 25c 176 w rbsoa reverse bias safe operating area t j = 150c 100a @ 550v electrical characteristics (per igbt) symbol characteristic test conditions min typ max unit i ces zero gate voltage collector current v ge = 0v, v ce = 600v 250 a v ce(sat) collector emitter saturation voltage v ge =15v i c = 50a t j = 25c 1.5 1.9 v t j = 150c 1.7 v ge ( th ) gate threshold voltage v ge = v ce , i c = 600a 5.0 5.8 6.5 v i ges gate C emitter leakage current v ge = 20v, v ce = 0v 600 na downloaded from: http:///
APTGLQ40HR120CT3G APTGLQ40HR120CT3G C rev 0 november, 2012 www.microsemi.com 4-9 dynamic characteristics (per igbt) symbol characteristic test conditions min typ max unit c ies input capacitance v ge = 0v v ce = 25v f = 1mhz 3150 pf c oes output capacitance 200 c res reverse transfer capacitance 95 q g gate charge v ge = 15v, i c = 50a v ce = 300v 500 nc t d(on) turn-on delay time inductive switching (25c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 110 ns t r rise time 45 t d(off) turn-off delay time 200 t f fall time 40 t d(on) turn-on delay time inductive switching (150c) v ge = 15v v bus = 300v i c = 50a r g = 8.2 120 ns t r rise time 50 t d(off) turn-off delay time 250 t f fall time 60 e on turn-on switching energy v ge = 15v v bus = 300v i c = 50a r g = 8.2 t j = 25c 0.2 mj t j = 150c 0.26 e off turn-off switching energy t j = 25c 1.35 mj t j = 150c 1.75 i sc short circuit data v ge 15v ; v bus = 360v t p 10s ; t j = 150c 250 a r thjc junction to case thermal resistance 0.85 c/w 3. sic diode ratings and characteristics (d3 & d4) (per diode) symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v i rm maximum reverse leakage current v r = 600v t j = 25c 10 60 a t j = 175c 20 300 i f dc forward current tc = 100c 10 a v f diode forward voltage i f = 10a t j = 25c 1.6 1.8 v t j = 175c 2 2.4 q c total capacitive charge i f = 10a, v r = 600v di/dt = 500a/s 28 nc c total capacitance f = 1mhz, v r = 200v 65 pf f = 1mhz, v r = 400v 50 r thjc junction to case thermal resistance 2.5 c/w downloaded from: http:///
APTGLQ40HR120CT3G APTGLQ40HR120CT3G C rev 0 november, 2012 www.microsemi.com 5-9 4. thermal & package characteristics temperature sensor ntc symbol characteristic min typ max unit r 25 resistance @ 25c 22 k r 25 /r 25 resistance tolerance 5 % b/b beta tolerance 3 b 25/100 t 25 = 298.16 k 3980 k ? ?? ? ? ?? ? ? ?? ? ? ?? ? ? = t t b r r t 1 1 exp 25 100/25 25 thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, 50/60hz 4000 v t j operating junction temperature range -40 175 c t stg storage temperature range -40 125 t c operating case temperature -40 100 torque mounting torque to heatsink m4 2 3 n.m wt package weight 110 g sp3f package outline (dimensions in mm) see application note 1906 - mounting instructions for sp3f power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t downloaded from: http:///
APTGLQ40HR120CT3G APTGLQ40HR120CT3G C rev 0 november, 2012 www.microsemi.com 6-9 5. typical performance curve q1, q2 high speed trench + field stop igbt4 + cr1 & cr2 diode characteristics t j =25c t j =150c 0 10 20 30 40 50 60 70 80 0 0.5 1 1.5 2 2.5 3 3.5 4 i c (a) v ce (v) output characteristics (v ge =15v) v ge =9v v ge =13v v ge =15v v ge =20v 0 10 20 30 40 50 60 70 80 0123456 i c (a) v ce (v) output characteristics t j = 150 c t j =25c t j =150c 0 10 20 30 40 50 60 70 80 56789101112 i c (a) v ge (v) transfert characteristics eon eoff 0 3 6 9 12 15 0 1020304050607080 e (mj) i c (a) energy losses vs collector current v ce = 600v v ge = 15v r g = 12 ? t j = 150 c eon eoff 1 2 3 4 5 6 10 15 20 25 30 e (mj) gate resistance (ohms) v ce = 600v v ge =15v i c = 40a t j = 150 c switching energy losses vs gate resistance 0 20 40 60 80 100 0 300 600 900 1200 i c (a) v ce (v) reverse bias safe operating area v ge =15v t j =1 50 c r g =12 ? d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse duration igbt downloaded from: http:///
APTGLQ40HR120CT3G APTGLQ40HR120CT3G C rev 0 november, 2012 www.microsemi.com 7-9 hard switching zcs zvs 0 30 60 90 120 150 0 102030405060 fmax, operating frequency (khz) i c (a) v ce =600v d=50% r g =12 ? t j =1 50 c t c =75 c operating frequency vs collector current t j =25c t j =125c 0 10 20 30 40 50 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i f (a) v f (v) forward characteristic of diode d = 0.9 0.7 0.5 0.3 0.1 0.05 sin g le pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse duration diode q3, q4 trench + field stop igbt3 t j =25c t j =150c 0 20 40 60 80 100 00.511.522.53 i c (a) v ce (v) output characteristics (v ge =15v) v ge =15v v ge =13v v ge =19v v ge =9v 0 20 40 60 80 100 00.511.522.533.5 i c (a) v ce (v) output characteristics t j = 150 c t j =25c t j =150c 0 20 40 60 80 100 56789101112 i c (a) v ge (v) transfert characteristics eon eoff 0 0.5 1 1.5 2 2.5 3 3.5 0 20406080100 e (mj) i c (a) energy losses vs collector current v ce = 300v v ge = 15v r g = 8.2 ? t j = 150 c downloaded from: http:///
APTGLQ40HR120CT3G APTGLQ40HR120CT3G C rev 0 november, 2012 www.microsemi.com 8-9 eon eoff 0 0.5 1 1.5 2 2.5 3 5 152535455565 e (mj) gate resistance (ohms) v ce = 300v v ge =15v i c = 50a t j = 150 c switching energy losses vs gate resistance 0 25 50 75 100 125 0 100 200 300 400 500 600 700 i c (a) v ce (v) reverse bias safe operating area v ge =15v t j =1 50 c r g =8.2 ? d = 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration in seconds maximum effective transient thermal impedance, junction to case vs pulse du ration cr3 & cr4 sic diode characteristics 0.9 0.7 0.5 0.3 0.1 0.05 sin gle pulse 0 0.5 1 1.5 2 2.5 3 0.00001 0.0001 0.001 0.01 0.1 1 10 thermal impedance (c/w) rectangular pulse duration (seconds) maximum effective transient thermal impedance, junction to case vs pulse d uration t j =25c t j =75c t j =125c t j =175c 0 5 10 15 20 0 0.5 1 1.5 2 2.5 3 3.5 i f forward current (a) v f forward voltage (v) forward characteristics t j =25c t j =75c t j =125c t j =175c 0 40 80 120 160 200 200 300 400 500 600 700 800 i r reverse current (a) v r reverse voltage (v) reverse characteristics 0 50 100 150 200 250 300 350 400 1 10 100 1000 c, capacitance (pf) v r reverse voltage capacitance vs.reverse voltage downloaded from: http:///
APTGLQ40HR120CT3G APTGLQ40HR120CT3G C rev 0 november, 2012 www.microsemi.com 9-9 disclaimer the information contained in the document (unless it is publicly available on the web without access restrictions) is proprietary and confidential information of microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of microsemi. if the recipient of this document has entered into a disclosure agreement with microsemi, then the ter ms of such agreement will also apply. this document and the information contained herein may not be modified, by any person other than authorized personnel of microsemi. no license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by impli cation, inducement, estoppels or otherwise. any license under such intellectual property rights must be approved by microsemi in writing signed by an officer of microsemi. microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. this product has been subject to limited testing and should not be used in conjunction with li fe- support or other mission-critical equipment or applications. microsemi assumes no liability whatsoever, and microsemi disclaims any express or implied warranty, relating to sale and/or use of microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. any performance specifications believed to be reliable but are not verified and customer or user must conduct and complete all performance and other testing of this product as well as any user or custo mers final application. user or customer shall not rely on any data and performance specifications or parameters provided by microsemi. it is the customers and users responsibility to independently determine suitability of any microsemi product and to test and verify the same. the information contained herein is provided as is, where is and with all faults, and the entire risk associated with such information is entirely with the user. microsemi specifically disclaim s any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. the product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp life support application seller's products are not designed, intended, or authorized for use as components in systems intended for space, aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other application in which the failure of the seller's product could create a situation where personal injury, death or property damage or loss may occur (collectively "life support applications"). buyer agrees not to use products in any life support applications and to the extent it does it shall conduct extensive testing of the product in such applications and further agrees to indemnify and hold seller, and its officers, emp loyees, subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, dama ges and expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damag e or otherwise associated with the use of the goods in life support applications, even if such claim includes allegations that seller was negligent regarding the design or manufacture of the goods. buyer must notify seller in writing before using sellers products in life support applications. seller will study with buyer alternative solutions to meet buyer application specification based on sellers sales conditions applicable for the new proposed specific part. downloaded from: http:///
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